2SD2579 transistor equivalent, npn triple diffused planar silicon transistor.
* High speed.
* High breakdown voltage (VCBO=1500V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process.
Package Dimensions
unit:mm.
Features
* High speed.
* High breakdown voltage (VCBO=1500V).
* High reliability (Adoption of HVP process). .
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